Surface acoustic wave filter with attenuation poles

ABSTRACT

A high-performance SAW filter is to be provided which has lower insertion loss in a pass band and high attenuation in an attenuation band on the low frequency side of the pass band. In a SAW filter with attenuation poles configured of a two-port circuit for filtering for forming a ladder type SAW filter using a SAW resonator and a two-port circuit for impedance formed of an impedance serially connected, the impedance of the two-port circuit for impedance is configured so as to form an attenuation band of a predetermined width having a sufficient attenuation characteristic on the low frequency side of a pass band.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to a band-pass filter of a ladder type configuration using a surface acoustic wave (SAW) resonator in small-sized mobile communication devices such as mobile telephones, particularly to a SAW filter with attenuation poles having high attenuation in an attenuation band and low insertion loss in a pass band.

[0002] In recent years, mobile communication device terminals such as small-sized, lightweight mobile telephones have been developed rapidly. In accordance with this, the realization of reduction in size and of high performance in components to be used is being conducted. In response to this, RF (radio frequency band) components using a SAW filter are developed and used. Particularly, the SAW filter is developed actively to partly become commercially available because it is a device that greatly contributes to the realization of reduction in size of RF parts.

[0003] In order to enhance the performance of the mobile communication device terminals, a high-performance SAW filter is demanded which has lower insertion loss in a pass band and high attenuation in attenuation bands.

[0004] The high-performance SAW filter is used in components for branching, inputting and outputting signals in the mobile communication device terminals.

[0005] A traditional ladder type SAW filter forming the high-performance SAW filter is described in Band pass filter with low loss using SAW resonators, Sato, et al., IEICE Ronbunshi A, vol. J76-A, No. 2, pp. 245-252 (1993).

[0006] In addition, an attenuation pole filter shown in FIG. 12 added with an attenuation pole inductance L (330) is used as a high-performance filter.

[0007]FIG. 12 is a circuit diagram illustrating that a two-port circuit 1 (380) of a traditional ladder type SAW filter formed of three series arms S1 (310), S2 (311) and S3 (312) and two shunt arms P1 (320) and P2 (321) is serially connected to a two-port circuit 2 (381) provided with an attenuation pole inductance L (330).

[0008] As described in JP-A-10-163808, in the SAW filter with attenuation poles shown in FIG. 12, attenuation poles are formed in an attenuation band on the high frequency side of the pass band by the attenuation pole inductance L (330), in addition to the characteristics of the traditional ladder type SAW filter. The attenuation poles can provide certain high attenuation characteristics in the attenuation characteristics on the high frequency side of the pass band.

SUMMARY OF THE INVENTION

[0009] In order to enhance the performance of the recent mobile communication device terminals, a high-performance SAW filter is demanded which has lower insertion loss in a pass band and high attenuation in the attenuation band on the low frequency side of the pass band. The high performance SAW filter is being investigated with the use of traditional bonding wire, but satisfying characteristics are not obtained yet under present circumstances.

[0010] In the traditional mobile communication device terminals such as mobile telephones, a SAW filter with attenuation poles having certain high attenuation characteristics in the attenuation band on the high frequency side of a communication band is shown in FIG. 12.

[0011] On this account, the circuit shown in FIG. 12 is used when attenuation poles need to be formed in the attenuation band on the high frequency side, and the traditional bonding wire is used for the attenuation pole inductance L (330) shown in FIG. 12.

[0012] In this example, the traditional bonding wire is used as the inductance L to vary the frequency of the attenuation poles by this L value, and the characteristics are changed to realize certain high attenuation. However, satisfying characteristics cannot be obtained yet.

[0013] Furthermore, high attenuation characteristics are demanded to provide in the attenuation band on the low frequency side, and attenuation poles need to be formed in the band. However, the traditional bonding wire is also used in the case. As a SAW filter with attenuation poles responding to this, a film is used in which the attenuation pole frequency of the attenuation band on the low frequency side of the pass band is adjusted by using the traditional bonding wire of the shunt arms in the ladder type SAW filter. However, required characteristics are not satisfied in this case as well.

[0014] In the mobile communication device terminals such as mobile telephones, a SAW filter with attenuation poles is desired which has high attenuation characteristics in the attenuation bands on the low frequency side and the high frequency side of the pass band. As a SAW filter with attenuation poles responding to this, a SAW filter with attenuation poles is used in which the traditional bonding wire is used as the inductance, an attenuation pole frequency is formed in the attenuation band on the low frequency side of the pass band, and the attenuation pole frequency is varied to provide high attenuation in the filter characteristics. However, the required characteristics are not satisfied.

[0015] In view of the problems, an object of the invention is to provide a high-performance SAW filter having lower insertion loss in a pass band and high attenuation in an attenuation band on the low frequency side of the pass band.

[0016] The invention adapts the following schemes for solving the problems.

[0017] (1) In a surface acoustic wave filter with attenuation poles configured of a two-port circuit for filtering for forming a ladder type surface acoustic wave filter with a surface acoustic wave resonator; and a two-port circuit for impedance formed of an impedance serially connected, the impedance of the two-port circuit for impedance is configured so as to form an attenuation band of a predetermined width having a sufficient attenuation characteristic on a low frequency side of a pass band.

[0018] (2) In the surface acoustic wave filter with attenuation poles as in (1), the impedance of the two-port circuit for impedance is formed of a resistance and an inductance.

[0019] (3) In the surface acoustic wave filter with attenuation poles as in (1), the impedance of the two-port circuit for impedance is formed of an impedance of a bonding wire.

[0020] (4) In a surface acoustic wave filter with attenuation poles configured of a two-port circuit for filtering for forming a ladder type surface acoustic wave filter with a surface acoustic wave resonator; and a two-port circuit for impedance formed of an impedance serially connected, the two-port circuit for impedance is configured of a π type circuit formed of three impedances so as to form an attenuation band of a predetermined width having a sufficient attenuation characteristic on a low frequency side of a pass band.

[0021] (5) In the surface acoustic wave filter with attenuation poles as in (4), a bonding wire is used as the three impedances of the two-port circuit for impedance.

[0022] (6) In the surface acoustic wave filter with attenuation poles as in (2), two bonding wires with three electrodes are used as the impedance of the two-port circuit for impedance.

[0023] (7) In the surface acoustic wave filter with attenuation poles as in (2), two bonding wires with three electrodes are used for the impedance of the two-port circuit for impedance, and a capacitance is connected in parallel to one of the bonding wires.

[0024] (8) In the surface acoustic wave filter with attenuation poles as in any one of (1) to (7), an inductance is set almost constant to 1 nH and a resistance is set to any given value ranging from 0.20 to 1.20 Ω in the impedance.

[0025] (9) In the surface acoustic wave filter with attenuation poles as in any one of (1) to (7), an inductance is set almost constant to 0.5 nH and a resistance is set to any given value ranging from 0.10 to 0.60 Ω in the impedance.

BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The teachings of the invention can be readily understood by considering the following detailed description in conjunction with the accompanying drawings, in which:

[0027]FIG. 1 is a diagram illustrating the circuit configuration of a first embodiment according to the invention;

[0028]FIG. 2 is a diagram illustrating a lumped constant equivalent circuit of FIG. 1 for describing the first embodiment according to the invention;

[0029]FIG. 3 is a diagram illustrating a half circuit of the lumped constant equivalent circuit shown in FIG. 2 for describing the relationship between the characteristics and component devices of the first embodiment according to the invention;

[0030]FIG. 4 is a lattice type equivalent circuit of the first embodiment according to the invention;

[0031]FIG. 5 is a schematic diagram illustrating a second embodiment according to the invention;

[0032]FIG. 6 is a schematic diagram illustrating Example 1 of attenuation pole impedance according to the invention;

[0033]FIG. 7 is a diagram illustrating an equivalent circuit of Example 1 of attenuation pole impedance according to the invention;

[0034]FIG. 8 is a schematic diagram illustrating Example 2 of attenuation pole impedance according to the invention;

[0035]FIG. 9 is a diagram illustrating an equivalent circuit of Example 2 of attenuation pole impedance according to the invention;

[0036]FIG. 10 is a graph summarizing the characteristics of Tables 2 and 4 of the invention;

[0037]FIG. 11 is a diagram illustrating ‘attenuation width’ of the invention; and

[0038]FIG. 12 is a diagram illustrating a circuit configuration in which the two-port circuit 1 (380) of a ladder type SAW filter formed of three series arms S1 (310), S2 (311) and S3 (312) and two shunt arms P1 (320) and P2 (321) is serially connected to the two-port circuit 2 (381) provided with the attenuation pole inductance L (330).

DETAILED DESCRIPTION OF THE INVENTION

[0039] Embodiments of the invention will be described in detail based on the drawings.

[0040] First Embodiment

[0041]FIG. 1 is a diagram illustrating the circuit configuration of a first embodiment according to the invention.

[0042] The first embodiment is configured in which a two-port circuit for filtering 1 (180) formed of a ladder type SAW filter of two-stage π type is serially connected to a two-port circuit 2 (181) using an attenuation pole impedance Z₁₁ (140) serially connecting a resistance R₁₁ to an inductance X₁₁, as depicted by solid lines in FIG. 1.

[0043] More specifically, a series arm S1 (110) is serially connected between an input terminal IN (103) and an output terminal OUT (104), shunt arm P1 (120) and P2 (121) are connected in parallel to the both ends of the series arm S1 (110) for forming the ladder type SAW filter of two-stage π type.

[0044] The two-port circuit for impedance 2 (181) is formed of the attenuation pole impedance Z₁₁ (140). The impedance Z₁₁ (140) is configured of R₁₁+jX₁₁.

[0045] The invention is characterized in that the two-port circuit for impedance 2 (181) is configured in which the pole frequency of the attenuation band on the low frequency side can be varied by the real part R₁₁ and the imaginary part X₁₁ of the attenuation pole impedance Z₁₁.

[0046]FIG. 2 is a diagram illustrating a lumped constant equivalent circuit of FIG. 1 for describing the first embodiment according to the invention.

[0047]FIG. 3 is a diagram illustrating a half circuit of the lumped constant equivalent circuit shown in FIG. 2 for describing the relationship between the characteristics and component devices of the first embodiment according to the invention. The lumped constant equivalent circuit shown in FIG. 2 is configured in which a two-port circuit of a π type filter formed of a series arm S1 (410 ) having an impedance 2ZS₁₁, and shunt arms P1 (420) and P2 (421), each having an impedance ZF₁, is serially connected to a two-port circuit formed of an impedance Z₁₁ (440) having 2R₁₁+j2X₁₁.

[0048] In the half equivalent circuit shown in FIG. 3, a series arm ZS₁₁ (510) is connected between an input terminal IN (560) and a terminal M2 (570), a shunt arm (520) having an impedance ZF₁ and an impedance (540) having R₁₁+jX₁₁ are serially connected between the input terminal IN (560) and an input terminal E1 (561), and a node of the shunt arm ZF₁ (520) and the impedance Z₁₁ (540) is connected to a terminal M3 (572).

[0049] In FIG. 3, suppose an input impedance is Z₁ where the terminal M2 (570), the terminal M3 (572) and a terminal E2 (571) are opened, and an input impedance is Z₂ where the terminal M2 (570), the terminal M3 (572) and the terminal E2 (571) are short-circuited, Z₁and Z₂ are given by Equation (1) and Equation (2), respectively.

Z ₂ =ZF ₁ +R ₁₁ +jX ₁₁   (1)

Z ₁ =ZF ₁ *ZS ₁/(ZF₁ +ZS ₁)   (2)

[0050]FIG. 4 is a lattice type equivalent circuit of the first embodiment according to the invention.

[0051] The characteristics of the first embodiment can be evaluated by converting the circuit shown in FIG. 1 to the lattice type circuit shown in FIG. 4 in equivalent circuit with Z₁ and Z₂. F matrix (four-terminal matrix [F]) in this case can be given by Equation (3). $\begin{matrix} {\begin{pmatrix} A & B \\ C & D \end{pmatrix} = {\frac{1}{Z_{2} - Z_{1}}\begin{pmatrix} {Z_{1} + Z_{2}} & {2Z_{1}Z_{2}} \\ 2 & {Z_{1} + Z_{2}} \end{pmatrix}}} & (3) \end{matrix}$

[0052] Accordingly, since a coefficient S of operating transmission is S=(A+B+C+D)/2 from Equation (3), it is evaluated by using Equation (4). $\begin{matrix} {S = \frac{\left( {Z_{1} + Z_{2}} \right) + {Z_{1}Z_{2}} + 1}{Z_{2} - Z_{1}}} & (4) \end{matrix}$

[0053] An attenuation characteristic α (ω) is given by Equation (5).

α(ω)=−20*LOG|(S)|(dB)   (5)

[0054] From Equations (4) and (5), the attenuation pole frequency of the attenuation characteristic α (ω) is the following case.

[0055] In the case of the traditional ladder type SAW filter, it is known that attenuation poles are formed under the conditions that the impedances Z₂ and Z₁ are infinite and zero.

[0056] In addition to the conditions, the invention is characterized in that the attenuation pole frequency is formed also in the case where Z₂=Z₁ and the attenuation pole impedance Z₁₁ (140) has the real part and the imaginary part.

[0057] In the meantime, the traditional bonding wire only has an inductance and the frequency is formed in the imaginary part alone. More specifically, in the invention, the attenuation characteristic can be changed also in the real part.

[0058] Hereinafter, a SAW filter for Cdma-One will be exemplified to describe the usability of the invention.

[0059] Table 1 shows the configuration of resonators, the series arm and the shunt arms shown in FIG. 1. TABLE 1 Configuration Series arm S1 Shunt arm P1 Shunt arm P2 of resonators (110) (120) (121) Intersection 60 70 70 length (μm) Logarithm 60 80 80

[0060] Table 2 shows the usability of the invention. TABLE 2 1-1. Attenuation pole inductance L is 1 (nH) 19.0 dB Width 4 14 15.8 16.1 16.2 16.1 15.9 15.5 15 R (OHM) 4.00 2.00 1.20 0.80 0.60 0.40 0.20 0.12 0.0004 L (nH) 1 1 1 1 1 1 1 1 1 Q 1 2.5 5 7.5 10 15 20 50 1000 1-2. Attenuation pole inductance L is 0.5 (nH) 24.0 dB Width 3 8.5 9.2 9.2 9 8.9 8.8 8.5 8 R (OHM) 2.00 1.00 0.60 0.40 0.30 0.20 0.10 0.06 0.0002 L (nH) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Q 1 2.5 5 7.5 10 15 20 50 1000

[0061] Traditionally, as a scheme to obtain high attenuation characteristics, the response is that the bonding wire is used as the attenuation pole inductance L to form attenuation poles in the attenuation band as described in the publicly known document.

[0062] More specifically, the traditional bonding wire in which the resistance value can be ignored and only the inductance acts as impedance is used to form attenuation poles in the attenuation band.

[0063] In the meantime, as shown in Table 2, the invention can obtain the high attenuation characteristics in which at least a resistance component is increased in addition to the impedance of the traditional bonding wire and thus the attenuation pole frequency and the attenuation characteristic can be varied without changing the pass band characteristics.

[0064] The bonding wire of the invention is a line that at least a resistance component is increased in addition to the impedance of the traditional bonding wire. The impedances are set to the relationship described below.

[0065] Hereinafter, the bonding wire of the invention will first be described based on FIGS. 6 to 9.

[0066]FIG. 6 is a schematic diagram illustrating Example 1 of attenuation pole impedance according to the invention.

[0067]FIG. 7 is a diagram illustrating an equivalent circuit of Example 1 of attenuation pole impedance according to the invention.

[0068]FIG. 8 is a schematic diagram illustrating Example 2 of attenuation pole impedance according to the invention.

[0069]FIG. 9 is a diagram illustrating an equivalent circuit of Example 2 of attenuation pole impedance according to the invention.

[0070]FIG. 6 is an example of attenuation pole impedance using the bonding wire of the invention. The bonding wire of the invention is formed to be a connecting wire 102, and an electrode 1 on a piezoelectric substrate 100 side is connected to an electrode 2 on a package 101 side.

[0071]FIG. 7 depicts an equivalent circuit of FIG. 6, in which an electrode 112 (110) connected to the electrode 1 on the piezoelectric substrate 100 side is connected to an electrode 113 (111) connected to the electrode 2 on a package 101 side by a series circuit formed of a resistance R₁₁ and an inductance L₁₁. More specifically, it shows that the impedance of the connecting wire 102 formed of the bonding wire of the invention is R₁₁+jωL₁₁.

[0072] Moreover, an example that the reactive component of impedance can be adjusted is shown in FIG. 8. The bonding wire of the invention is formed to be a connecting wire (1) 126 and a connecting wire (2) 127 to connect an electrode (1) on a piezoelectric substrate 120 side, an electrode (2) on a package 121 side and an electrode (3) on a package 122 side to each other. Furthermore, a capacitance substrate 123 for adjusting the reactive component is connected between the electrode (2) on the package 121 side and the electrode (3) on the package 122 side through normal connecting wires (C1) 124 and (C2) 125 which can ignore resistance values and are unrelated to the bonding wire of the invention.

[0073]FIG. 9 depicts an equivalent circuit of FIG. 8, in which an electrode 133 (130) connected to the electrode 1 on the piezoelectric substrate 120 side is connected to an electrode 134 (131) connected to the electrode 2 on the package 121 side by a series circuit formed of a resistance R₁₁ and an inductance L₁₁. An equivalent circuit is formed in which the electrode 134 (131) connected to the electrode 2 on the package 121 side is connected to an electrode 135 (132) connected to the electrode 3 on the package 122 by a series circuit formed of a resistance R₁₂ and an inductance L₁₂. Similarly, an equivalent circuit is formed in which the electrode 134 (131) connected to the electrode 2 on the package 121 side and the electrode 135 (132) connected to the electrode 3 on the package 122 are connected to a capacitance C₁₂ through normal connecting wires that can ignore resistance values. More specifically, the equivalent circuit is formed in which the electrode 133 (130) is connected to the electrode 134 (131) by the circuit having R₁₁+jωL₁₁ and the electrode 134 (131) is connected to the electrode 135 (132) by the circuit having R₁₂+jωL₁₂ and the circuit having 1/jωC₁₂.

[0074] As described above, the attenuation pole impedance of the invention is configured as described with FIGS. 6 to 9.

[0075] Table 2-1-1 shows the value of attenuation width (MHz) where the attenuation value of the attenuation band on the low frequency side of the pass band is 19.0 (dB) when the attenuation pole impedance Z₁₁ is almost constant to the inductance L nearly equal 1 (nH) and the resistance R is a parameter and shows the Q characteristic value of the SAW filter with attenuation poles.

[0076] Table 2-1-2 shows the value of attenuation width (MHz) where the attenuation value of the attenuation band on the low frequency side of the pass band is 24.0 (dB) when the attenuation pole impedance Z₁₁ is almost constant to the inductance L nearly equal 0.5 (nH) and the resistance R is a parameter and shows the Q characteristic value of the SAW filter with attenuation poles.

[0077]FIG. 11 is a diagram for describing the attenuation width of the invention.

[0078] In addition, as shown in FIG. 11, the ‘attenuation width’ is an interval that the attenuation value of the attenuation band on the low frequency side of the pass band continues at a predetermined value or below. ‘Predetermined value’ is the value that the attenuation value of the attenuation band on the low frequency side is sufficiently attenuated with respect to the attenuation value of the pass band in practice. Under the present circumstances, the tendency shows the characteristics that can provide sufficient attenuation width, not the characteristics that are greatly attenuated in a narrow range.

[0079] Range of Resistance in the First Embodiment

[0080] The attenuation value of the attenuation band on the low frequency side of the pass band and the value of attenuation width (MHz) are set to be sufficient values at practical levels. A preferable range of the resistance value to surely clear the conditions at that time is as follows:

[0081] 1) The range of resistance where L is nearly equal 1 (nH) is 0.20 to 1.20 (Ω).

[0082] 2) The range of resistance where L is nearly equal 0.5 (nH) is 0.10 to 0.60 (Ω).

[0083] Advantage of the First Embodiment

[0084] As described above, the first embodiment has high attenuation characteristics in the attenuation band on the low frequency side of the pass band.

[0085] The traditional response is that the bonding wire is used as the attenuation pole inductance L in order to realize high attenuation characteristics by providing attenuation poles in the attenuation band in the attenuation band on the low frequency side of the pass band, but satisfying characteristics are not obtained.

[0086] In the meantime, as compared with the characteristics of the traditional ladder type SAW filter, the first embodiment according to the invention can obtain required characteristics in which the impedance having the real part is used in the two-port circuit for forming the pole frequency and high attenuation characteristics are obtained by the real part of the resistance component along with the impedance such as the bonding wire.

[0087] Second Embodiment

[0088]FIG. 5 is a schematic diagram illustrating a second embodiment according to the invention.

[0089] In the second embodiment, a two-port circuit for filtering 1 (180) is configured of a ladder type SAW filter of two-stage π type having the same circuit configuration as that of the first embodiment, and a two-port circuit for impedance 2 (181) is configured of a π type circuit using three impedances. Each of three impedances Z₂₁ (241), Z₂₂ (242) and Z₂₃ (243) is configured of a resistance R and an inductance X.

[0090] More specifically, the two-port circuit for filtering 1 (180) configures the π type circuit of one series arm S1 (210) and two shunt arms P1 (220) and P2 (221).

[0091] The two-port circuit for impedance 2 (181) configures the π type circuit of an attenuation pole impedance Z₂₁ (241) having R₁+jX₁, an attenuation pole impedance Z₂₂ (242) having R₂+jX₂ and an attenuation pole impedance Z₂₃ (243) having R₃+jX₃.

[0092] The invention is characterized in that high attenuation characteristics can be provided in the pole frequency of the attenuation band on the low frequency side by the real part R and the imaginary part X of the attenuation pole impedances Z₂₁, Z₂₂ and Z₂₃.

[0093] The configuration of each resonator of the second embodiment is the same as the configuration of the first embodiment, shown in Table 3. TABLE 3 Configuration series arm S1 shunt arm P1 shunt arm P2 of resonators (110) (120) (121) Intersection 60 70 70 length (μm) Logarithm 80 80 80

[0094] Z₁ and Z₂ in Equation (8) are given by Equations (6) and (7).

Z ₂ =ZF ₁ +R ₁₁ +jX ₁₁   (6)

Z ₁ =ZF ₁*(ZS ₁ +Z _(SS))/(ZF ₁ +ZS ₁ +Z ₃₃)   (7)

where Z_(SS)=(R₁+jX₁)*(R₂+jX₂)/(R₁+jx₁+R₂+jX₂).

[0095] Accordingly, a coefficient S of operating transmission is evaluated by Equation (7) from Equation (6). $\begin{matrix} {S = \frac{Z_{1} + Z_{2} + {Z_{1}Z_{2}} + 1}{Z_{2} - Z_{1}}} & (8) \end{matrix}$

[0096] The attenuation characteristic of the second embodiment can be determined by putting Equations (6) and (7) in Equation (8). More specifically, the difference from the first embodiment is in that Equations (6) and (7) are put in Equation (8) for determination because the π type circuit configuration is used in the two-port circuit 2. Accordingly, the pole frequency is a frequency that the denominator of Equation (8) is zero, and the attenuation characteristic becomes high attenuation characteristics, being different from traditional ones.

[0097] Hereinafter, the frequency band of the cdmaOne filter will be exemplified to describe the usability of the invention with reference to Table 4. Table 4 shows resonators, the series arm and the shunt arms configuring the circuit shown in FIG. 5.

[0098] The upper part of Table 4-2-1 shows the value of attenuation width (MHz) where the attenuation value of the low frequency side of the attenuation band of the pass band is 15.5 (dB) when the attenuation pole impedances Z₂₁, Z₂₂ and Z₂₃ are almost constant to the inductances L1 to L3 nearly equal 0.5 (nH) and the resistance R is a parameter, and shows the Q characteristic value of the SAW filter with attenuation poles.

[0099] The lower part of Table 4-2-1 shows the value of attenuation width (MHz) where the attenuation value of the attenuation band on the low frequency side of the pass band is 22.0 (dB) when the attenuation pole impedances Z₂₁, Z₂₂ and Z₂₃ are almost constant to the inductances L1 and L3 nearly equal 0.5 (nH) and to the inductance L2 nearly equal 0.2 (nH) and the resistance R is a parameter, and shows the Q characteristic value of the SAW filter with attenuation poles.

[0100] The upper part of Table 4-2-2 shows the value of attenuation width (MHz) where the attenuation value of the attenuation band on the low frequency side of the pass band is 15.5 (dB) when the attenuation pole impedances Z₂₁, Z₂₂ and Z₂₃ are almost constant to the inductances L1 to L3 nearly equal 1.0 (nH) and the resistance R is a parameter, and shows the Q characteristic value of the SAW filter with attenuation poles.

[0101] The middle part of Table 4-2-2 shows the value of attenuation width (MHz) where the attenuation value of the attenuation band on the low frequency side of the pass band is 24.1 (dB) when the attenuation pole impedances Z₂₁, Z₂₂ and Z₂₃ are almost constant to the inductances L1 and L3 nearly equal 1.0 (nH) and to the inductance L2 nearly equal 0.2 (nH) and the resistance R is a parameter, and shows the Q characteristic value of the SAW filter with attenuation poles.

[0102] The lower part of Table 4-2-2 shows the value of attenuation width (MHz) where the attenuation value of the attenuation band on the low frequency side of the pass band is 17.2 (dB) when the attenuation pole impedances Z₂₁, Z₂₂ and Z₂₃ are almost constant to the inductances L1 and L3 nearly equal 1.0 (nH) and to the inductance L2 nearly equal 0.5 (nH) and the resistance R is a parameter, and shows the Q characteristic value of the SAW filter with attenuation poles. TABLE 4 2-1. Attenuation pole inductance L is 0.5 (nH) 15.5 dB 9.8 10.8 12.3 13.3 13.2 13.5 12 11 Width R (OHM) 2.00 1.00 0.60 0.40 0.30 0.20 0.10 0.01 L1, L3 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 L2 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Q 1 2.5 5 7.5 10 15 20 1000 15.5 dB 7.5 9.2 10 10.7 10.7 11.3 10 8 Width R (OHM) 2.00 1.00 0.60 0.40 0.30 0.20 0.10 0.01 L1, L3 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 L2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Q 1 2.5 5 7.5 10 15 20 1000 2-2. Attenuation pole inductance L is 1.0 (nH) 15.5 dB 18.3 20.3 23.3 26 26.4 26.8 26.7 21.5 Width R (OHM) 4.00 2.00 1.20 0.80 0.60 0.40 0.20 0.01 L1, L3 1 1 1 1 1 1 1 1 L2 1 1 1 1 1 1 1 1 Q 1 2.5 5 7.5 10 15 20 1000 15.5 dB 4.4 6.6 8.3 8.7 8.8 8.9 8.7 6.5 Width R (OHM) 4.00 2.00 1.20 0.80 0.60 0.40 0.20 0.01 L1, L3 1 1 1 1 1 1 1 1 L2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Q 1 2.5 5 7.5 10 15 20 1000 15.5 dB 12.3 14.3 17.2 19.1 19.5 19.8 19.7 16 Width R (OHM) 4.00 2.00 1.20 0.80 0.60 0.40 0.20 0.01 L1, L3 1 1 1 1 1 1 1 1 L2 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Q 1 2.5 5 7.5 10 15 20 1000

[0103] Range of Resistance in the Second Embodiment

[0104] The attenuation value of the attenuation band on the low frequency side of the pass band and the value of attenuation width (MHz) are set to sufficient values at practical levels. A preferable range of the resistance value to surely clear the conditions at that time is as follows:

[0105] 1) The range of resistance is 0.20 to 1.20 (Ω) when L is nearly equal 1 (nH).

[0106] 2) The range of resistance is 0.10 to 0.60 (Ω) when L is nearly equal 0.5 (nH).

[0107] Traditionally, as a scheme to obtain high attenuation characteristics, the response is that the bonding wire is used as the attenuation pole inductance L to form attenuation poles in the attenuation band as described in the related document.

[0108] The second embodiment according to the invention can obtain high attenuation characteristics in which the resistance component is used in addition to the bonding wire and thus the attenuation pole frequency and the attenuation characteristic can be varied without changing the pass band characteristics. Particularly, the improvement in the attenuation characteristic is significant, allowing a bandwidth of 20 (dB) to be a broad band.

[0109] Relationship between the Attenuation Width and Resistance of the SAW Filter with Attenuation Poles

[0110]FIG. 10 is a graph summarizing the characteristics of Tables 2 and 4 of the invention.

[0111] Characteristic curve (1) depicts Table 2-1-1.

[0112] Characteristic curve (2) depicts Table 2-1-2.

[0113] Characteristic curve (3) depicts the upper part of Table 4-2-1.

[0114] Characteristic curve (4) depicts the lower part of Table 4-2-2.

[0115] Characteristic curve (5) depicts the upper part of Table 4-2-2.

[0116] Characteristic curve (6) depicts the middle part of Table 4-2-2.

[0117] Characteristic curve (7) depicts the lower part of Table 4-2-2.

[0118] Points a, a′, b, b′, c, c′, d, d′, e, e′, f, f′, g and g′ of each of the characteristic curves mean ‘a predetermined value’ expressing the interval where the attenuation value of the attenuation band on the low frequency side of the pass band continues at a predetermined value or below, meaning an effective range including the preferable ranges described above.

[0119] The conditions for good items are that the range of resistance is 0.to 0.6 (Ω) when the attenuation pole inductance L is nearly equal 0.5 (nH).

[0120] The conditions for good items are that the range of resistance is 0.to 1.2 (Ω) when the attenuation pole inductance L is nearly equal 1.0 (nH).

[0121] The attenuation pole impedance tends to broaden the range of resistance as the value of inductance L is increased.

[0122] The relationship between the inductance and resistance can be selected based on these characteristic curves.

[0123] As described above, the invention has high attenuation characteristics in the attenuation band on the low frequency side of the pass band.

[0124] The invention can obtain required characteristics in which the impedance having the real part is used in the two-port circuit for forming the pole frequency and high attenuation characteristics are provided by the real part of the resistance component along with impedance such as the bonding wire, as compared with the characteristics of the traditional ladder type SAW filter. 

What is claimed is:
 1. A surface acoustic wave filter with attenuation poles comprising: a two-port circuit for filtering for forming a ladder type surface acoustic wave filter with a surface acoustic wave resonator; and a two-port circuit for impedance formed of an impedance serially connected, wherein the impedance of the two-port circuit for impedance is configured so as to form an attenuation band of a predetermined width having a sufficient attenuation characteristic on a low frequency side of a pass band.
 2. A surface acoustic wave filter with attenuation poles according to claim 1, wherein the impedance of the two-port circuit for impedance is formed of a resistance and an inductance.
 3. A surface acoustic wave filter with attenuation poles according to claim 1, wherein the impedance of the two-port circuit for impedance is formed of an impedance of a bonding wire.
 4. A surface acoustic wave filter with attenuation poles comprising: a two-port circuit for filtering for forming a ladder type surface acoustic wave filter with a surface acoustic wave resonator; and a two-port circuit for impedance formed of an impedance serially connected, wherein the two-port circuit for impedance is configured of a π type circuit formed of three impedances so as to form an attenuation band of a predetermined width having a sufficient attenuation characteristic on a low frequency side of a pass band.
 5. A surface acoustic wave filter with attenuation poles according to claim 4, wherein a bonding wire is used as the three impedances of the two-port circuit for impedance.
 6. A surface acoustic wave filter with attenuation poles according to claim 2, wherein two bonding wires with three electrodes are used as the impedance of the two-port circuit for impedance.
 7. A surface acoustic wave filter with attenuation poles according to claim 2, wherein two bonding wires with three electrodes are used for the impedance of the two-port circuit for impedance, and a capacitance is connected in parallel to one of the bonding wires.
 8. A surface acoustic wave filter with attenuation poles according to claim 1, wherein an inductance is set almost constant to 1 nH and a resistance is set to any given value ranging from 0.20 to 1.20 Ω in the impedance.
 9. A surface acoustic wave filter with attenuation poles according to claim 1, wherein an inductance is set almost constant to 0.5 nH and a resistance is set to any given value ranging from 0.10 to 0.60 Ω in the impedance. 